生长温度对InAs/GaAs横向异质结构纳米线形貌及晶体结构的影响

来源：中国复合材料学会

《复合材料学报》优先在线发表论文。

摘  要：低维半导体材料因其超常的物理性能而受到了广泛关注和研究。本文采用金属有机物化学气相沉积（MOCVD）技术，利用金作催化剂制备了InAs/GaAs横向异质结构纳米线，并且讨论了不同生长温度情况下InAs横向异质材料对纳米线形貌及晶体结构的影响。提高InAs材料的生长温度，可以有效地抑制纳米线的纵向生长，使其实现横向异质结构的生长。在异质结构纳米线横向生长时发生了侧面晶面旋转的现象，这是纳米线表面重构后侧面趋向能量更低的晶面的结果。本文的研究工作为推动微纳技术的发展提供了相应的理论基础和科学依据。

关键词：纳米线；气-液-固；金属有机化合物气相沉积；GaAs；InAs

Abstract: Low-dimensional semiconductor materials have attracted wide attention and research due to their extraordinary physical properties. In this paper, metal organic chemical vapor deposition (MOCVD) was used to grow InAs/GaAs radial heterostructure nanowires using gold as catalysts. The effects of growth temperatures of InAs radial heterostructure on the morphology and crystal structure of the nanowires were discussed. Increasing the growth temperature of InAs material can effectively inhibit the axial growth of nanowires and achieve the growth of radial heterostructures. The lateral crystal surface rotation occurs when the heterostructure nanowires grow laterally, which is the result of the lower side of the nanowires. The research work in this paper provides a theoretical basis and scientific basis for the development of micro-nano technology.

Keywords: nanowire; vapor-liquid-solid; MOCVD; GaAs; InAs

作者：刘妍等，燕山大学 国家冷轧板带装备及工艺工程技术研究中心，秦皇岛

通讯作者：郭经纬，燕山大学 信息科学与工程学院，秦皇岛

全文详见中国知网学术期刊优先数字出版。